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Improving the Short-Circuit Reliability in IGBTs: How to Mitigate Oscillations By Paula Diaz Reigosa, Francesco Iannuzzo, Munaf Rahimo, Chiara Corvasce and Frede Blaabjerg

Last modified: 28.06.2018

Published in: IEEE Transactions on Power Electronics

DOI (link to publication from Publisher): 10.1109/TPEL.2017.2783044

 

Figure 1:  3.3-kV enhanced-trench IGBT during phases A and B from top to bottom. Left: electron density; middle: electric field; and right: electric field through the whole cell.

 

Figure 2: SPT 3.3-kV planar IGBT during phases A and B from top to bottom. Left: electron density; middle: electric field; and right: electric field through the whole cell.

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